| PART |
Description |
Maker |
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27V322-100F1 M27V322-150XP6 M27V322 M27V322-100B1 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
Fuses, 150mA 250V SB 5X15 BULK
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM 32兆位Mb x16低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27C202-100B1TR M27C202-100B3TR M27C202-100B6TR M2 |
From old datasheet system
2 Mbit (128Kb x16) UV EPROM and OTP EPROM
CAP .18UF 400V POLYPROPYLENE
RES 200-OHM 5% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM
2 Mbit 128Kb x16 UV EPROM and OTP EPROM 2兆位存储28KB的x16紫外线和OTP存储
8-Pin SOIC Dual-Channel Low Current High Gain Split Darlington Output Optocoupler 2兆位存储28KB的x16紫外线和OTP存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
HIROSE ELECTRIC Co., Ltd.
|
| M27C320 6185 M27C320-80N1 M27C320-100M1 M27C320-10 |
From old datasheet system
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM 32兆位4Mb的x8或检察官办公室的2Mb x16存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27C4002-70N1X M27C4002-70N1TR M27C4002-70XJ1X M27 |
4 Mbit (256Kb x16) UV EPROM and OTP EPROM 4兆位56Kb的16）紫外线存储器和OTP存储
|
意法半导
STMicroelectronics N.V.
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M59BW10225N1T M59BW102 M59BW102N |
1 MBIT (64KB X16, BURST) LOW VOLTAGE FLASH MEMORY
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
1 MBIT (64KB X16, BURST) LOW VOLTAGE FLASH MEMORY
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27C160-100F1 M27C160-100F6 M27C160-50F1 M27C160-5 |
16 MBIT (2MB X8 OR 1MB X16) UV EPROM AND OTP EPROM
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27C202-80F1 M27C202-70K6 M27C202-120F6 M27C202-90 |
128K X 16 OTPROM, 80 ns, PDSO40
128K X 16 OTPROM, 90 ns, PQCC44
128K X 16 UVPROM, 100 ns, CDIP40
2 MBIT (128KB X16) UV EPROM AND OTP EPROM
|
STMICROELECTRONICS
ST Microelectronics
|
| M27512 M27512-3F6 27512 M27256-20F6 M27256-25F6 M2 |
NMOS 512 Kbit (64Kb x 8) UV EPROM, 250ns
NND - NMOS 512 KBIT (64KB X8) UV EPROM
NMOS 512K 64K x 8 UV EPROM NMOS管为512k 64KX8的紫外线存储
NMOS 512K 64K x 8 UV EPROM
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
